Fabrication of Titanium Dioxide Nanorod Arrays-Polyaniline Heterojunction for Development of UV Photosensor

Authors

  • M.M. Yusoff NANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
  • M.H. Mamat NANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
  • M.F. Malek NANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
  • N. Othman NANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
  • A.S. Ismail NANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
  • S.A. Saidi NANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
  • R. Mohamed Faculty of Applied Sciences, Universiti Teknologi MARA Pahang, 26400 Jengka, Pahang, Malaysia
  • A.B. Suriani Faculty of Science and Mathematics, Universiti Pendidikan Sultan Idris, Tanjung Malim, Perak 35900, Malaysia
  • Z. Khusaimi NANO-SciTech Centre, Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
  • M. Rusop NANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia

Keywords:

TiO2 nanorod, TNAs/PANI heterojunction, UV photosensor, Optical materials, Electronic materials

Abstract

An ultraviolet (UV) photosensor is successfully fabricated via heterojunction device consisted of n-type titanium dioxide (TiO2) nanorod arrays (TNAs), and p-type polyaniline (PANI) by a facile method on fluorine tin oxide (FTO)-coated glass substrate. The fabricated UV photosensor demonstrated a UV-catalyst activity through the generation of photocurrent under UV irradiation (365 nm, 750 µW/cm2). The measured UV response showed the highest generation of photocurrent of 0.52 μAcm-2, and responsivity of 0.65 mA/W at 1.0 V reverse bias. The results indicate that the fabricated TNAs/PANI heterojunction-based device could be a promising candidate for the application of UV photosensor.

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Published

2017-06-15

Issue

Vol. 4 No. 1 (2017)

Section

Articles

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