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Abstract: PbZrO3-Based Antiferroelectric Thin Film Capacitors with High Energy Storage Density
| International Journal of Advanced Applied Physics Research (Volume 1 Issue 1) | |
| PbZrO3-Based Antiferroelectric Thin Film Capacitors with High Energy Storage Density |  |
| Pages 35-39 Mao Ye, Peng Lin, Haitao Huang, Biaolin Peng, Qiu Sun, Fuping Wang, Xiang Peng, Xierong Zeng, and Shanming Ke DOI: http://dx.doi.org/10.15379/2408-977X.2014.01.01.4Published: 28 August 2014 |
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| Abstract | |
| A series of 400-nm-thick sandwich structured Pb(1+x)ZrO3/(Pb,Eu)ZrO3/Pb(1+x)ZrO3(PZO/PEZO/PZO) antiferroelectric thin films with different Pb excess content (x) (x=0%, 10%, 20%, and 30%) in the PZO precursors have been successfully deposited on Pt(111)/Ti/SiO2/Si substrates by a sol–gel method. The effects of Pb excess content on the dielectric properties, and energy storage performance of the PZO/PEZO/PZO thin films have been investigated in detail. It is found that all the films show a unique perovskite phase structure. With increasing Pb excess content in the PZO precursors, P-E hysteresis loop changes from slanted to square shape. Meanwhile, a larger antiferroelectric to ferroelectric switching field (EAF) and ferroelectric to antiferroelectric switching field (EFA) are observed in the films with higher Pb excess content. When increasing Pb excess content from 0% to 30%, the energy storage density of the sandwich structured films is remarkably improved from 11.4 to 14.8 J/cm3 at 1000 kV/cm. | |
| Keywords | |
| Electron-phonon interaction, Magnetic excitations, Van Hove singularity, Gap energy, Pseudogap, Coherence length, Isotope coefficient, Superconducting gap ratio. | |
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