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Latest Issue of “ International Journal of Membrane Science and Technology” has published. Visit link; “ Latest Issue" ....! Special Issue of “International Journal of Membrane Science and Technology” is scheduled for Feb-2022..! Kindly Visit link: “Special Issues for IJMST”

Abstract: Modelling and Simulation of Self Heating in GaN Based High Electron Mobility Transistors (HEMTs)

International Journal of Advanced Applied Physics Research (Volume 4 Issue 2)
Modelling and Simulation of Self Heating in GaN Based High Electron Mobility Transistors (HEMTs)
Pages 22-27 Nishchal Patni, A.D.D. Dwivedi, Deepak Kumar, Rahul Bothra, and Anjali Kumari DOI: http://dx.doi.org/10.15379/2408-977X.2017.04.02.01 Published: 27 December 2017
Abstract
In this paper we present the numerical simulation and characterization of GaN based high electron mobility transistors (HEMTs) using commercial device simulation software ATLAS from Silvaco international. Device has been characterized in terms of its electrical and thermal behavior by simulating its transfer and output characteristics without self-heating and with self-heating. Also we simulated the distribution of lattice temperature inside the device for thermal characterization of the device. For electrical characterization the fundamental equations responsible for charge transport of charge carriers have been solved using finite element method. For thermal characterization fundamental equations of charge transport and heat flow equations have been solved self consistently.
Keywords
GaN, HEMTs, Self heating, Numerical simulation, Drift diffusion model.

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