| International Journal of Advanced Applied Physics Research (Volume 3 Issue 1) |
| High Quality InSb Microcrystal Hall Sensor doped with Te or Bi |
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Pages 5-10
Inessa Bolshakova, F.S. Terra, G.M. Mahmoud and A.M. Mansour
DOI: http://dx.doi.org/10.15379/2408-977X.2016.03.01.02
Published: 15 June 2016 |
| Abstract |
| InSb microcrystaldoped with Cr, Al or Sn, which were radiation-resistant and were applied as magnetic microsensors in Satellites. The magnetic field sensitivity, , as a function of temperature was determined for both Bi and Te doped InSb microcrystals. Tellurium doping of InSb microcrystals at 3 x10 17 cm-3 leads to increase of the magnetic field sensitivity, , to ≈ 1.1 V/AT, but it decreases to ≈ 0.45 V/AT at 450K. On the other hand doping with Bi at 1 x 1017 cm-3 gives ≈ 1 V/AT. The charge carriers mobility of the investigated microcrystals varies from about 2.11m2/V.s to 3.4 m2/V.s, for Te doped samples and from 3.2 m2/V.s to 4.3 m2/V.s for Bi doped samples at room temperature. The electrical resistivity variation with temperature was also studied. |
| Keywords |
| InSb,Hall magnetic sensor, Te, Bi, Sensitivity, Magnetoresistance, Chemical Transport Reaction (CTR). |
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