| International Journal of Advanced Applied Physics Research (Volume 4 Issue 2) |
| Modelling and Simulation of Self Heating in GaN Based High Electron Mobility Transistors (HEMTs) |
 |
Pages 22-27
Nishchal Patni, A.D.D. Dwivedi, Deepak Kumar, Rahul Bothra, and Anjali Kumari
DOI: http://dx.doi.org/10.15379/2408-977X.2017.04.02.01
Published: 27 December 2017 |
| Abstract |
| In this paper we present the numerical simulation and characterization of GaN based high electron mobility transistors (HEMTs) using commercial device simulation software ATLAS from Silvaco international. Device has been characterized in terms of its electrical and thermal behavior by simulating its transfer and output characteristics without self-heating and with self-heating. Also we simulated the distribution of lattice temperature inside the device for thermal characterization of the device. For electrical characterization the fundamental equations responsible for charge transport of charge carriers have been solved using finite element method. For thermal characterization fundamental equations of charge transport and heat flow equations have been solved self consistently. |
| Keywords |
| GaN, HEMTs, Self heating, Numerical simulation, Drift diffusion model. |
 |